收藏本站
NCP3011, NCV3011
ELECTRICAL CHARACTERISTICS ( ? 40 ° C < T J < +125 ° C, V CC = 12 V, for min/max values unless otherwise noted)
Characteristic
Conditions
Min
Typ
Max
Unit
ERROR AMPLIFIER (GM)
Transconductance
0.9
1.33
1.9
mS
Open Loop dc Gain
Output Source Current
Output Sink Current
FB Input Bias Current
Feedback Voltage
COMP High Voltage
COMP Low Voltage
(Notes 4 and 6)
T J = 25 C
? 40 ° C < T J < +125 ° C,
4.7 V < V IN < 28 V
V FB = 0.75 V
V FB = 0.85 V
?
45
45
?
0.792
0.788
4.0
?
70
70
70
0.5
0.8
0.8
4.4
60
?
100
100
500
0.808
0.812
5.0
?
dB
m A
m A
nA
V
V
V
mV
OUTPUT VOLTAGE FAULTS
Feedback OOV Threshold
Feedback OUV Threshold
0.9
0.55
1.0
0.59
1.1
0.65
V
V
OVER CURRENT
ISET Source Current
7.0
14
18
m A
Current Limit Set Voltage (Note 5)
R SET = 22.2 k W
140
240
360
mV
GATE DRIVERS AND BOOST CLAMP
HSDRV Pullup Resistance
HSDRV Pulldown Resistance
LSDRV Pullup Resistance
LSDRV Pulldown Resistance
HSDRV falling to LSDRV Rising
Delay
LSDRV Falling to HSDRV Rising
Delay
Boost Clamp Voltage
V CC = 8 V and V BST = 7.5 V
V SW = GND
100 mA out of HSDR pin
V CC = 8 V and V BST = 7.5 V
V SW = GND
100 mA into HSDR pin
V CC = 8 V and V BST = 7.5 V
V SW = GND
100 mA out of LSDR pin
V CC = 8 V and V BST = 7.5 V
V SW = GND
100 mA into LSDR pin
V CC and V BST = 8 V
V CC and V BST = 8 V
V IN = 12 V, V SW = GND, V COMP = 1.3 V
4.0
2.5
3.0
1.0
50
60
5.5
10.5
5.0
8.9
2.8
85
85
7.5
20
11.5
16
6.0
110
120
9.6
W
W
W
W
ns
ns
V
THERMAL SHUTDOWN
Thermal Shutdown
Hysteresis
(Notes 4 and 7)
(Notes 4 and 7)
?
?
150
15
?
?
° C
° C
4.
5.
6.
7.
Guaranteed by design.
The voltage sensed across the high side MOSFET during conduction.
This assumes 100 pF capacitance to ground on the COMP Pin and a typical internal R o of > 10 M W .
This is not a protection feature.
http://onsemi.com
6
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MIC2505BM IC SW HIGH SIDE SGL 2A 8SOIC
MIC2505-2BM IC SW HIGH SIDE SGL 2A 8SOIC
MIC2505-1BM IC SW HIGH SIDE SGL 2A 8SOIC
TAAB106K020G CAP TANT 10UF 20V 10% AXIAL
MC34063LBBEVB EVAL BOARD FOR MC34063LBB
A9BAG-0502F FLEX CABLE - AFF05G/AF05/AFE05T
EBM08DTMD-S189 CONN EDGECARD 16POS R/A .156 SLD
RCM06DSUI CONN EDGECARD 12POS DIP .156 SLD
相关代理商/技术参数
NCP3012 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Synchronous PWM Controller
NCP3012DTBR2G 功能描述:电压模式 PWM 控制器 Single Output Buck 0.8V to 40V 70uA RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel
NCP301HSN09T1 功能描述:电压监测器/监控器 0.9V Detector RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT
NCP301HSN09T1G 功能描述:电压监测器/监控器 0.9V Detector w/Reset High RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT
NCP301HSN10T1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series
NCP301HSN11T1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series
NCP301HSN12T1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series
NCP301HSN13T1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series